Piezophototronic effect were used to enhance the performance of electrically pumped lasers for the first time, and the lasers were realized in p-GaN/MgO/ZnO nanowire (NW) structured laser diode (LD). The threshold voltage of the lasers was reduced from 48 to 20 V by applying a pressure of 16.0 kPa on the device, and the emission efficiency and injection current at a fixed applied voltage of 50 V was enhanced by a factor of 3.95 and 1.25, respectively. Meanwhile, the output power has been enhanced by 496%. To study the piezophototronic effect on the lasing characteristics of the p-GaN/MgO/ZnO NWs structure, the emission characteristics of the structure under pressure was investigated. The pressure is calculated by dividing the applied force by the overall contact area between the p-GaN layer and the ITO electrode for simplicity. The fill rate of the NWs is less than 5%, as estimated from the size and density of the NWs. The results may provide a promising route to enhanced lasing performance of piezoelectric semiconductors; meanwhile, the results may also open another application area for the piezophototronic effect.