By introducing excessive zinc during the growth process, degenerated Mg Zn O films have been prepared. The resistivity of the Mg Zn O films is only 0.053 cm, and the electron concentration is 1.0×10 cm , which is well above the Mott concentration of ZnO (2.9×10 cm ). The origin of such a high electron concentration can be attributed to the excessive zinc in the films. The results reported in this paper provide a route to conductive degenerated MgZnO films, thus may lay a ground for the fabrication of ZnO-based heterostructures or deep ultraviolet optoelectronic devices.