Optical properties investigation of p-type ZnO film based on doping by diffusion

doi:10.3964/j.issn.1000-0593(2015)07-1787-04

UM > INSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING

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	Optical properties investigation of p-type ZnO film based on doping by diffusion
	Chen F.1; Fang D.1; Wang S.-P.3 ; Fang X.1; Tang J.-L.1; Zhao H.-F.3; Fang F.1; Chu X.-Y.1; Li J.-H.1; Wang F.1; Wang X.-H.1; Liu G.-J.1; Ma X.-H.1; Wei Z.-P.1
	2015-07
Source Publication	SPECTROSCOPY AND SPECTRAL ANALYSIS
ISSN	1000-0593
Volume	35 Issue:7 Pages:1787-1790
Abstract	The main purpose of this paper is to investigate the optical properties of p-type ZnO film based on P doping. ZnO film was grown by Atomic layer deposition (ALD) on InP subsrate in this experiment, and phosphorus diffused into ZnO lattice by annealing treatment at different temperature (500, 700℃). The optical properties of samples were investigated by photoluminescence (PL) spectroscopy, which indicated that the annealing temperature is the important factor influencing the phosphorus diffusion doping. The low-temperature PL spectra of the sample which annealed at 700℃ for 1 h exhibited acceptor related emission peaks located at 3.351, 3.311, 3.246 and 3.177 eV, which were attributed to A°X, FA, DAP and DAP-1LO, respectively. The acceptor binding energy is estimated to be about 122 meV, which is agreed with the theoretic values in phosphorus-doped ZnO films. In this paper, through thermal diffusion method to realize the p-type doped ZnO thin films, it solved the main problems which limited the development of ZnO based optoelectronic devices, and has an important significance for the development of the ZnO semiconductor materials and ZnO based photoelectric device.
Keyword	Atomic Layer Deposition (Ald) Diffuse Doped P-type Zno Phosphorus-doped Photoluminescence
DOI	10.3964/j.issn.1000-0593(2015)07-1787-04
URL	View the original
Indexed By	SCIE
Language	英語English
WOS Research Area	Spectroscopy
WOS Subject	Spectroscopy
WOS ID	WOS:000357761200006
Scopus ID	2-s2.0-84938231473
Fulltext Access	View Full-Text via DOI View Full-Text via Web of Science View Full-Text via Scopus
Citation statistics
Document Type	Journal article
Collection	INSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Corresponding Author	Chen F.; Fang D.; Wang S.-P.
Affiliation	1.Changchun University of Science and Technology 2.Nanchang University 3.Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences
Recommended Citation GB/T 7714	Chen F.,Fang D.,Wang S.-P.,et al. Optical properties investigation of p-type ZnO film based on doping by diffusion[J]. SPECTROSCOPY AND SPECTRAL ANALYSIS, 2015, 35(7), 1787-1790.
APA	Chen F.., Fang D.., Wang S.-P.., Fang X.., Tang J.-L.., Zhao H.-F.., Fang F.., Chu X.-Y.., Li J.-H.., Wang F.., Wang X.-H.., Liu G.-J.., Ma X.-H.., & Wei Z.-P. (2015). Optical properties investigation of p-type ZnO film based on doping by diffusion. SPECTROSCOPY AND SPECTRAL ANALYSIS, 35(7), 1787-1790.
MLA	Chen F.,et al."Optical properties investigation of p-type ZnO film based on doping by diffusion".SPECTROSCOPY AND SPECTRAL ANALYSIS 35.7(2015):1787-1790.

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