| Status | 已發表Published |
| GaAs nanoneedle photodetector monolithically grown on a (111) si substrate by MOCVD | |
| Chuang L.C.; Chase C.; Moewe M.; Ng K.W.; Crankshaw S.; Chang-Hasnain C. | |
| 2009-12-01 | |
| Source Publication | Optics InfoBase Conference Papers
 |
| Abstract | P-n junction GaAs nanoneedle photodetectors are monolithically grown on a (111) Si substrate by MOCVD with CMOS compatibility. A linear response of the photocurrent to the irradiance can be obtained under room temperature operation. © 2009 Optical Society of America. |
| URL | View the original |
| Language | 英語English |
| Fulltext Access | |
| Document Type | Conference paper |
| Collection | University of Macau |
| Affiliation | University of California, Berkeley |
| Recommended Citation GB/T 7714 | Chuang L.C.,Chase C.,Moewe M.,et al. GaAs nanoneedle photodetector monolithically grown on a (111) si substrate by MOCVD[C], 2009. |
| APA | Chuang L.C.., Chase C.., Moewe M.., Ng K.W.., Crankshaw S.., & Chang-Hasnain C. (2009). GaAs nanoneedle photodetector monolithically grown on a (111) si substrate by MOCVD. Optics InfoBase Conference Papers. |
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