| Residential College | false |
| Status | 已發表Published |
| Effects of AlGaN/AlN stacked interlayers on GaN growth on Si (111) | |
| Wang H.1; Liang H.2; Wang Y.2; Ng K.-W.2; Deng D.-M.2; Lau K.-M.2 | |
| 2010-03-19 | |
| Source Publication | Chinese Physics Letters
 |
| ISSN | 0256307X 17413540 |
| Volume | 27Issue:3 |
| Abstract | We report the growth of high quality and crack-free GaN film on Si (111) substrate using AlGaN/AlN stacked interlayers. Compared with the previously used single A1N interlayer, the AlGaN/AlN stacked interlayers can more effectively reduce the tensile stress inside the GaN layer. The cross-sectional TEM image reveals the bending and annihilation of threading dislocations (TDs) in the overgrown GaN film which leads to a decrease of TD density. © 2010 Chinese Physical Society and IOP Publishing Ltd. |
| DOI | 10.1088/0256-307X/27/3/038103 |
| URL | View the original |
| Language | 英語English |
| WOS ID | WOS:000275376200076 |
| Scopus ID | 2-s2.0-77949385554 |
| Fulltext Access | |
| Citation statistics | |
| Document Type | Journal article |
| Collection | University of Macau |
| Affiliation | 1.Institute of Semiconductors Chinese Academy of Sciences 2.Hong Kong University of Science and Technology |
| Recommended Citation GB/T 7714 | Wang H.,Liang H.,Wang Y.,et al. Effects of AlGaN/AlN stacked interlayers on GaN growth on Si (111)[J]. Chinese Physics Letters, 2010, 27(3). |
| APA | Wang H.., Liang H.., Wang Y.., Ng K.-W.., Deng D.-M.., & Lau K.-M. (2010). Effects of AlGaN/AlN stacked interlayers on GaN growth on Si (111). Chinese Physics Letters, 27(3). |
| MLA | Wang H.,et al."Effects of AlGaN/AlN stacked interlayers on GaN growth on Si (111)".Chinese Physics Letters 27.3(2010). |
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