| Status | 已發表Published |
| Helically propagating modes in InGaAs nanoneedle lasers grown on poly-silicon and silicon substrates | |
| Tran T.; Chen R.; Ng K.W.; Ko W.S.; Lu F.; Chang-Hasnain C.J. | |
| 2011-12-01 | |
| Source Publication | Optics InfoBase Conference Papers
 |
| Abstract | InGaAs nanoneedle lasers were grown on both polycrystalline-Si and (100)-Si substrates by low temperature (400 °C) MOCVD. Measured near field mode patterns agree well with FDTD simulations, confirming helically propagating modes as lasing modes. © OSA/CLEO 2011. |
| URL | View the original |
| Language | 英語English |
| Fulltext Access | |
| Document Type | Conference paper |
| Collection | University of Macau |
| Affiliation | University of California, Berkeley |
| Recommended Citation GB/T 7714 | Tran T.,Chen R.,Ng K.W.,et al. Helically propagating modes in InGaAs nanoneedle lasers grown on poly-silicon and silicon substrates[C], 2011. |
| APA | Tran T.., Chen R.., Ng K.W.., Ko W.S.., Lu F.., & Chang-Hasnain C.J. (2011). Helically propagating modes in InGaAs nanoneedle lasers grown on poly-silicon and silicon substrates. Optics InfoBase Conference Papers. |
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