| Residential College | false |
| Status | 已發表Published |
| High-speed avalanche photodiodes using III-V nanopillars monolithically grown on silicon | |
| Chen R.; Parekh D.; Ng K.W.; Chang-Hasnain C. | |
| 2012-11-22 | |
| Conference Name | 2012 IEEE 9th International Conference on Group IV Photonics, GFP 2012 |
| Source Publication | IEEE International Conference on Group IV Photonics GFP
 |
| Pages | 48-50 |
| Conference Date | 29 August 2012through 31 August 2012 |
| Conference Place | . |
| Abstract | We demonstrate III-V avalanche photodiodes monolithically integrated onto silicon by CMOS-compatible growth. With bandwidth exceeding 3 GHz and gain as high as 28, nanopillar devices showcase the viability of bottom-up III-V nanomaterials for high-performance optoelectronics. © 2012 IEEE. |
| Keyword | Avalanche Photodiode Iii-v On silicOn Nanostructure |
| DOI | 10.1109/GROUP4.2012.6324082 |
| URL | View the original |
| Language | 英語English |
| Scopus ID | 2-s2.0-84869162591 |
| Fulltext Access | |
| Citation statistics | |
| Document Type | Conference paper |
| Collection | University of Macau |
| Affiliation | University of California, Berkeley |
| Recommended Citation GB/T 7714 | Chen R.,Parekh D.,Ng K.W.,et al. High-speed avalanche photodiodes using III-V nanopillars monolithically grown on silicon[C], 2012, 48-50. |
| APA | Chen R.., Parekh D.., Ng K.W.., & Chang-Hasnain C. (2012). High-speed avalanche photodiodes using III-V nanopillars monolithically grown on silicon. IEEE International Conference on Group IV Photonics GFP, 48-50. |
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