| Status | 已發表Published |
| Room-temperature InGaAs/InP quantum-well-in-nanopillar laser directly grown on silicon | |
| Bhattacharya I.; Lu F.; Malheiros-Silveira G.N.; Deshpande S.; Ng K.W.; Chang-Hasnain C. | |
| 2016-12-16 | |
| Source Publication | 2016 Conference on Lasers and Electro-Optics, CLEO 2016
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| Abstract | We demonstrate room-temperature transparency and optically pumped lasing with an InGaAs quantum well active region integrated in an InP nanoresonator cavity grown monolithically on silicon. As-grown silicon transparent lasers will enable on-chip optical interconnects. |
| URL | View the original |
| Language | 英語English |
| Fulltext Access | |
| Document Type | Conference paper |
| Collection | University of Macau |
| Affiliation | University of California, Berkeley |
| Recommended Citation GB/T 7714 | Bhattacharya I.,Lu F.,Malheiros-Silveira G.N.,et al. Room-temperature InGaAs/InP quantum-well-in-nanopillar laser directly grown on silicon[C], 2016. |
| APA | Bhattacharya I.., Lu F.., Malheiros-Silveira G.N.., Deshpande S.., Ng K.W.., & Chang-Hasnain C. (2016). Room-temperature InGaAs/InP quantum-well-in-nanopillar laser directly grown on silicon. 2016 Conference on Lasers and Electro-Optics, CLEO 2016. |
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