| Residential College | false |
| Status | 已發表Published |
| Epitaxial growth of graphene on silicon carbide (SiC) | |
| Huang H.1; Chen S.2; Wee A.T.S.1; Chen W.1 | |
| 2014 | |
| Source Publication | Graphene: Properties, Preparation, Characterisation and Devices |
| Publisher | Elsevier Ltd. |
| Pages | 3-26 |
| Abstract | This chapter provides an overview of the epitaxial growth of graphene films on various silicon carbide (SiC) substrates, their growth mechanism, and atomic scale characterization. The chapter focuses on the growth of epitaxial graphene (EG) via the thermal decomposition of single-crystal SiC in ultrahigh vacuum (UHV) and under ambient pressure. There is also a discussion of the thermal decomposition of polycrystalline SiC thin films and the intercalation methods used to produce EG. © 2014 Woodhead Publishing Limited. All rights reserved. |
| Keyword | Epitaxial Graphene Silicon Carbide Thermal Decomposition |
| DOI | 10.1533/9780857099334.1.3 |
| URL | View the original |
| Language | 英語English |
| ISBN | 9780857095084; |
| WOS ID | WOS:000341776400002 |
| Scopus ID | 2-s2.0-84903013858 |
| Fulltext Access | |
| Citation statistics | |
| Document Type | Book chapter |
| Collection | University of Macau |
| Affiliation | 1.National University of Singapore 2.Nanyang Technological University |
| Recommended Citation GB/T 7714 | Huang H.,Chen S.,Wee A.T.S.,et al. Epitaxial growth of graphene on silicon carbide (SiC)[M]. Graphene: Properties, Preparation, Characterisation and Devices:Elsevier Ltd., 2014, 3-26. |
| APA | Huang H.., Chen S.., Wee A.T.S.., & Chen W. (2014). Epitaxial growth of graphene on silicon carbide (SiC). Graphene: Properties, Preparation, Characterisation and Devices, 3-26. |
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