An experiment was conducted to demonstrate that low-temperature processed NiO-based nanocrystal ink (LT-NiO) has the potential to form an almost loss-free hole selective interface for flat heterojunction perovskite-based solar cells. First, The patterned ITO substrates were ultrasonic cleaned with acetone and isopropanol for 10 min each. On cleaned ITO substrate, a dense and smooth layer of LT-NiO was deposited by spin coating and followed by annealing at 70?230°C for 10 min in air to remove organic components. The as-prepared perovskite precursor solution was filtered using 0.45 μm PTFE syringe filter and coated onto the ITO/LT-NiO substrate at a speed of 4000 r.p.m. for 35 s. J-V characteristics of all the devices were measured using a source measurement unit from BoTest. FTPS:FTPS-EQE measurements were carried out using a Vertex 70 from Brucker optics, equipped with QTH lamp, quartz beam splitter and external detector option. A major improvement in open circuit voltage is found by replacing PEDOT:PSS with LT-NiO. A detailed analysis reveals that LT-NiO significantly reduces non-radiative recombination at the PEDOT:PSS/perovskite interface and further enhances the radiative LED efficiency towards unity which brings open circuit voltage closer to the radiative limit.