As a typical correlated oxide, VO2 has attracted significant attentions due to its pronounced thermal-driven metal-insulator transition. Regulating electronic density through electron doping is an effective way to modulate the balance between competing phases in strongly correlated materials. However, the electron-doping triggered phase transitions in VO2 as well as the intermediate states are not fully explored. Here, we report a controlled and reversible phase transition in VO2 films by continuous hydrogen doping. Metallic and insulating phases are successively observed at room temperature as the doping concentration increases. The doped electrons linearly occupy V 3d-O 2p hybridized orbitals and consequently modulate the filling of the VO2 conduction band edge states, resulting in the electron-doping driven continuous phase transitions. These results suggest the exceptional sensitivity of VO2 electronic properties to electron concentration and orbital occupancy, providing key information for the phase transition mechanism.