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Effect of oxygen partial pressure contents on the properties of al-doped ZnO thin films prepared by radio frequency sputtering
Hwang D.2; Ahn J.2; Hui K.2; Hui K.1; Son Y.2
2011-08-05
Source PublicationJournal of Ceramic Processing Research
ISSN1229-9162
Volume12Issue:2Pages:150-154
Abstract

Al-doped Zinc Oxide (AZO) films were deposited on glass substrates by radio frequency (R.F.) magnetron sputtering technique. The properties of the films were controlled by adjusting the oxygen flow contents as a mixture of Ar and O gases. The structural, electrical and optical properties of the films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), a UV-visible spectrometer, as well as Hall effect measurements. Results revealed that a film deposited with an oxygen partial pressure content of 0% had a hexagonal structure, a strongly preferred orientation with the c-axis perpendicular to the substrate and the lowest resistivity of about 6.9 × 10 Ω cm. The optical transmittance spectra showed more than 80% transmittance in the visible region, and the band gap was found to be direct. Strong violet emission located at 2.96 eV was observed in the AZO films deposited with an oxygen partial pressure content of 0%.

KeywordAl-doped Zno Film Magnetron Sputtering Oxygen Partial Pressure
URLView the original
Language英語English
Fulltext Access
Document TypeJournal article
CollectionINSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Corresponding AuthorSon Y.
Affiliation1.City University of Hong Kong
2.Pusan National University
Recommended Citation
GB/T 7714
Hwang D.,Ahn J.,Hui K.,et al. Effect of oxygen partial pressure contents on the properties of al-doped ZnO thin films prepared by radio frequency sputtering[J]. Journal of Ceramic Processing Research, 2011, 12(2), 150-154.
APA Hwang D.., Ahn J.., Hui K.., Hui K.., & Son Y. (2011). Effect of oxygen partial pressure contents on the properties of al-doped ZnO thin films prepared by radio frequency sputtering. Journal of Ceramic Processing Research, 12(2), 150-154.
MLA Hwang D.,et al."Effect of oxygen partial pressure contents on the properties of al-doped ZnO thin films prepared by radio frequency sputtering".Journal of Ceramic Processing Research 12.2(2011):150-154.
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