High throughput optimizations of alloy and doped films based on ZnO and parallel synthesis of ZnO/MgxZn1-xO quantum wells using combinatorial laser MBE towards ultraviolet laser

UM > INSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING

Status	已發表Published
	High throughput optimizations of alloy and doped films based on ZnO and parallel synthesis of ZnO/MgxZn1-xO quantum wells using combinatorial laser MBE towards ultraviolet laser
	Ohtomo Akira; Makino Takayuki; Tamura Kentaro; Matsumoto Yuji; Segawa Yusaburo; Tang Zikang; Wong George K.L.; Koinuma Hideomi; Kawasaki Masashi
	2000
Source Publication	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3941
Pages	70-81
Abstract	We report high-throughput optimizations for various material parameters of MgZnO and ZnCdO alloy films, Al-doped ZnO films, MgZnO/ZnO single quantum wells and superlattice structures with using combinatorial laser MBE (CL-MBE). Combinatorial chips including nine thin film pixels were grown on lattice-matched ScAlMgO (0001) substrates by switching the mask patterns and targets during pulsed laser deposition. For alloy experiments, two chips (two runs) provided us with complete and systematic understanding of the band gap in a range from 3.0 to 3.6 eV. An Al-doped chip revealed systematic variation of the conductivity from 3 to 2 × 10 Scm. A single quantum well chip showed clear systematic variation of photoluminescence peak energy as a function of well layer thickness. Two superlattice chips showed clear systematics on the quantum sub-band levels in absorption spectra even at room temperature, giving all desired information being useful for designing an efficient active layer in possible ultraviolet light emitting devices. The excitonic stimulated emissions could be observed even at very low optical pumping at room temperature. The threshold excitation intensity changed in a range of 11-40 kW/cm and the emission energy can be tuned between 3.2 and 3.4 eV, depending on the well layer thickness and/or the Mg content in the barrier layers. The excitonic stimulated emission could be observed up to 100°C and a characteristic temperature was as high as 87 K for the best sample optimized by the combinatorial approach using only 8 deposition runs carried out in a week.
URL	View the original
Language	英語English
Fulltext Access	View Full-Text via Scopus
Document Type	Conference paper
Collection	INSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Affiliation	Tokyo Institute of Technology
Recommended Citation GB/T 7714	Ohtomo Akira,Makino Takayuki,Tamura Kentaro,et al. High throughput optimizations of alloy and doped films based on ZnO and parallel synthesis of ZnO/MgxZn1-xO quantum wells using combinatorial laser MBE towards ultraviolet laser[C], 2000, 70-81.
APA	Ohtomo Akira., Makino Takayuki., Tamura Kentaro., Matsumoto Yuji., Segawa Yusaburo., Tang Zikang., Wong George K.L.., Koinuma Hideomi., & Kawasaki Masashi (2000). High throughput optimizations of alloy and doped films based on ZnO and parallel synthesis of ZnO/MgxZn1-xO quantum wells using combinatorial laser MBE towards ultraviolet laser. Proceedings of SPIE - The International Society for Optical Engineering, 3941, 70-81.

Files in This Item:
There are no files associated with this item.

If you have any objections to this item, please fill out the form below and the administrator will contact you as soon as possible.
Content:
Email：	*
Affiliation No.
Verification Code:	Refresh

Any comments and suggestions are welcomed.
Title:	*
Content:
Email：	*
Verification Code:	Refresh