High-quality ZnO and BeZnO films were grown on c-plane sapphire substrate using plasma-assisted molecular beam epitaxy (P-MBE) by inserting metal oxide buffer layers. X-ray diffraction(XRD) results show that all films have hexagonal wurtzite structure and highly c-axis orientation. The full width at half maximum (FWHM) of ZnO film is as low as 108 arcsec, and the FWHM of BeZnO film is less than 600 arcsec. The resonance Raman spectra show that both A(LO) and A(2LO) phonon modes shift to larger wavenumber with more Be doping. For the first time, the local vibration mode related to Be doping is found. The photoluminescence (PL) spectrum of ZnO films has only one emission peak(378 nm) at room temperature. However, another peak due to the strong free exciton emission is observed at low temperature (80 K). With the temperature increasing, the free exciton emission dominated over the bound exciton emission, and its peak shows gradual red shift. As for BeZnO film, the strong free exciton emission peak is not found at low temperature (80 K) due to the declined crystal quality caused by the incorporation of Be. It is also found that the peak position of BeZnO films in the PL and Raman spectra have local maximum values between 100~200 K, which is suggested to be caused by the stress effect due to the thermal expansion mismatch of the alloy lattices.