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High-voltage generation with stacked photodiodes in standard cmos process
Law M.K.; Bermak A.
2010-12-01
Source PublicationIEEE Electron Device Letters
ISSN07413106
Volume31Issue:12Pages:1425-1427
Abstract

In this letter, a method to generate a high open-circuit voltage using integrated photodiodes fabricated in a standard CMOS process is described. In contrast to conventional high-voltage generation schemes that serially connect photodiodes using different substrates or high-cost silicon-on-insulator processes, the proposed scheme preserves a single substrate solution using a low-cost standard CMOS process. The proposed scheme exploits the photocurrent generation capabilities of different photodiode implementations available in a standard CMOS process and provides compensation for parasitic losses to generate a high output voltage using series connections of photodiodes. Output voltages of 0.84 and 1.3 V are successfully generated by two-stage and three-stage photodiode connections using an AMS 0.35-μ/m standard CMOS process, respectively. Our proposed scheme is therefore suitable for low-cost high-integration-level system-on-chip implementations utilizing integrated solar energy harvesting with high-voltage generation. © 2006 IEEE.

KeywordEnergy Harvesting High Open-circuit Voltage Stacked Integrated Photodiodes
DOI10.1109/LED.2010.2075910
URLView the original
Language英語English
WOS IDWOS:000284541400023
Scopus ID2-s2.0-78649446422
Fulltext Access
Citation statistics
Document TypeJournal article
CollectionUniversity of Macau
AffiliationHong Kong University of Science and Technology
Recommended Citation
GB/T 7714
Law M.K.,Bermak A.. High-voltage generation with stacked photodiodes in standard cmos process[J]. IEEE Electron Device Letters, 2010, 31(12), 1425-1427.
APA Law M.K.., & Bermak A. (2010). High-voltage generation with stacked photodiodes in standard cmos process. IEEE Electron Device Letters, 31(12), 1425-1427.
MLA Law M.K.,et al."High-voltage generation with stacked photodiodes in standard cmos process".IEEE Electron Device Letters 31.12(2010):1425-1427.
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