Residential College | false |
Status | 已發表Published |
A sub-1V BJT-based CMOS temperature sensor from 55°C to 125°C | |
Wang B.1; Law M.K.2; Tang F.1; Bermak A.1 | |
2012-09-28 | |
Conference Name | IEEE International Symposium on Circuits and Systems |
Source Publication | ISCAS 2012 - 2012 IEEE International Symposium on Circuits and Systems |
Pages | 3114-3117 |
Conference Date | MAY 20-23, 2012 |
Conference Place | Seoul, SOUTH KOREA |
Abstract | In this paper, a smart temperature sensor working at a supply voltage as low as 0.9V over the full military temperature range is presented. Low voltage operation is achieved by biasing the front-end BJT pairs with different emitter currents for two different sensing ranges, from 55°C to 30°C and from 20°C to 125°C, respectively. A second-order inverter-based ΣΔADC with dynamic element matching (DEM) and input signal chopping to control the conversion error to within 0:2°C is used for digital readout. Front-end bias currents are selected during the design stage to minimize the induced sensing error. The proposed sensor is implemented using the TSMC 0.18μm 1P6M process. Simulation result shows that a +1°C=0:1°C sensing error using one-point calibration can be achieved from 55°C to 125°C. At a sampling speed of 20 samples/s, the sensor consumes 3.4μA and 4.7μA in the low temperature range and the high temperature range, respectively. © 2012 IEEE. |
DOI | 10.1109/ISCAS.2012.6271980 |
URL | View the original |
Indexed By | SCIE |
Language | 英語English |
WOS Research Area | Engineering |
WOS Subject | Engineering, Electrical & Electronic |
WOS ID | WOS:000316903703078 |
Scopus ID | 2-s2.0-84866630746 |
Fulltext Access | |
Citation statistics | |
Document Type | Conference paper |
Collection | INSTITUTE OF MICROELECTRONICS |
Affiliation | 1.Hong Kong University of Science and Technology 2.Universidade de Macau |
Recommended Citation GB/T 7714 | Wang B.,Law M.K.,Tang F.,et al. A sub-1V BJT-based CMOS temperature sensor from 55°C to 125°C[C], 2012, 3114-3117. |
APA | Wang B.., Law M.K.., Tang F.., & Bermak A. (2012). A sub-1V BJT-based CMOS temperature sensor from 55°C to 125°C. ISCAS 2012 - 2012 IEEE International Symposium on Circuits and Systems, 3114-3117. |
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