| Residential College | false |
| Status | 已發表Published |
| High-Stability Resistive Switching Memristor with High-Retention Memory Window Response for Brain-Inspired Computing | |
Khan Rajwali1; Iqbal Shahid2; HUI KWUN NAM3 ; Khera Ejaz Ahmad4; Kalluri Sujith5; Soliyeva Mukhlisa6; Sangaraju Sambasivam1
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| 2025-04 | |
| Source Publication | Sensors and Actuators A: Physical
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| Volume | 385Pages:11316 |
| Abstract | In this work, we demonstrate the stable resistive switching (RS) and interesting neuromorphic features of Ag/Ni-HfO₂/P⁺⁺-Si memristors. This unique technique stacks a Ni-HfO₂ resistive switching (RS) layer on top of a P⁺⁺-Si layer, considerably improving the stability, switching efficiency, and synaptic characteristics of memristors. A detailed physical model describes the RS filamentary process, which involves Ag+ ions migrating and forming electrical filaments with applied voltage, shifting the memristor consistent response from low-resistance and high-resistance phases. The memristor maintains consistent RS properties for 96 h with low deterioration, because of the strong Ni-HfO₂ layer that improves switching stability. The memristor chip performs successfully in both voltage sweeping and pulse mode processes. The pulse-mode endurance results show that the low-resistance state (LRS) and high-resistance state (HRS) are stable after 100 cycles, with SET and RESET reaction times of 960 and 1636 ms, correspondingly. These findings show the memristors capacity for quick, energy-efficient switching. Furthermore, the memristor shows synaptic action, which resembles biological activities for example short-term (STP) and long-term plasticity (LTP). The conductivity regulation, like neurotransmitter release and synaptic weight correction, is accomplished by ion migration during voltage pulses. Also, the paired-pulse facilitation (PPF) reveals the memristors capacity to simulate synaptic activities, with a PPF index of 130 %. The variations in pulse height and width indicate the progressive change from STP to LTP. Thus, the new device design indicates potential in neuromorphic computing, combining robust resistive switching with sophisticated synaptic properties to simulate essential brain activities such as memory retention and adaptation. These findings indicate that Ag/Ni-HfO₂/P⁺⁺-Si memristors have potential consistent switching efficiency and synaptic abilities serve as promising contenders for future artificial intelligence and computer hardware applications. |
| Document Type | Journal article |
| Collection | INSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING |
| Corresponding Author | Sangaraju Sambasivam |
| Affiliation | 1.National Water and Energy Center, United Arab Emirates University, Al Ain 15551, United Arab Emirates 2.Department of Physics at the University of Wisconsin, La Crosse, WI 54601, USA 3.Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macau SAR, 999078, China 4.Department of Physics, The Islamia University of Bahawalpur, Pakistan 5.Department of Electronics and Communication Engineering, School of Engineering and Sciences, SRM University-AP, Amaravati, Andhra Pradesh 522240, India 6.Department of Physics and Teaching Methods, Tashkent State Pedagogical University, Tashkent, Uzbekistan |
| Recommended Citation GB/T 7714 | Khan Rajwali,Iqbal Shahid,HUI KWUN NAM,et al. High-Stability Resistive Switching Memristor with High-Retention Memory Window Response for Brain-Inspired Computing[J]. Sensors and Actuators A: Physical, 2025, 385, 11316. |
| APA | Khan Rajwali., Iqbal Shahid., HUI KWUN NAM., Khera Ejaz Ahmad., Kalluri Sujith., Soliyeva Mukhlisa., & Sangaraju Sambasivam (2025). High-Stability Resistive Switching Memristor with High-Retention Memory Window Response for Brain-Inspired Computing. Sensors and Actuators A: Physical, 385, 11316. |
| MLA | Khan Rajwali,et al."High-Stability Resistive Switching Memristor with High-Retention Memory Window Response for Brain-Inspired Computing".Sensors and Actuators A: Physical 385(2025):11316. |
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