Due to rapid advancements in fields of modern optics and opto-electronics, the need for the production of super-smooth surfaces on single crystal silicon has become increasingly pressing. Although previous research has elucidated the mechanism of material removal and defect evolution in chemical mechanical polishing, brittle characteristic of the vulnerable silicon material makes it rather challenging to catch up with the extreme requirements of high performance and highly efficient manufacture. Nevertheless the critical polishing pressure for scratch free super-smooth surface in pragmatic machining remains undiscovered, which greatly hinders improvement in related fields. Consequently, this paper presents a series of analyses and experiments focused on the material removal process at the micro scale. A micron-sized SiO2 ball tip is utilized to simulate the scratching on surface of a single crystal silicon substrate. Experimental results reveal that appropriate pH conditions and a maximal contact pressure of 0.97 GPa (at a scratching speed of 2 µm/s) between the particle and substrate are crucial for achieving a super-smooth surface. Based on these findings, a defect-free chemical mechanical polishing method is proposed, which involves controlling contact pressure for practical fabrication. Further verification using the KDOSP 650γ machining system and ion beam figuring has demonstrated that a defect-free surface with a roughness of 0.209 nm RMS (Root Mean Square) can be achieved at an average removal rate of 316 nm/min. These insights provide new understandings in the fabrication of super-smooth surfaces on single crystal silicon, offering significant benefits for enhancing the performance of brittle single crystal silicon-based devices and the corresponding machining capabilities.