A configurable quad-slope 70V GaN gate driver is designed to optimize the EMI noise and to simultaneously improve the level shifter's robustness based on dV/dt detection and delay compensation. A three-mode level shifter with enhanced negative voltage tolerance (ENVT) and commonmode noise energy recovery is firstly proposed to adapt to different operating conditions. The measured results show that the high-side bias of the level shifter (V_LS) in different modes is always larger than the supply voltage of the high-side gate driver (V_B) when signal transmission, achieving different ENVT capability. The delay of dV/dt detection is eliminated by using the proposed circuits of double-edge self-triggered delay compensation. The amplitude of V_SW ringing at different gate control modes are compared, showing that the proposed quad-slope control is able to suppress the ringing amplitude by 42.3% with R_ON=5Ω.