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Pseudo-halide anions engineering of FAPbI3 surface and SnO2/FAPbI3 heterostructure
Chen, Jinlian1; Feng, Mengjia1; Zha, Chenyang1,2,3; Zhang, Linghai1; Wang, Lin1
2023-10-20
Source PublicationSurfaces and Interfaces
ISSN2468-0230
Volume43Pages:103530
Abstract

Recently, introducing pseudo-halide anions to form mixed-anion perovskites has been found to significantly improve the quality of perovskite films, providing an effective strategy for realizing stable and efficient perovskite solar cells. Herein, using density functional theory (DFT) calculations, we explore the possibilities to improve the stability of FAPbI surface and the charge transfer properties of SnO/FAPbI heterostructure by doping pseudo-halide anions. We first study the thermodynamic stability of the perovskite surfaces and find that pseudo-halide-doped FAPbI surfaces are more stable than pristine FAPbI surface. All the SnO/perovskite interfaces form type-II band alignment that can facilitate interfacial electron−hole separation under illumination. Moreover, the bandgap and work function of FAPbI surface can be tuned via using pseudo-halide anions, lowering the conduction band offsets of SnO/perovskite heterostructures. Photo-generated electrons can be easily transferred from perovskites to SnO, which will be favorable for solar cell applications. In addition, pseudo-halide-doped surfaces can also enhance light absorption properties, compared to pristine FAPbI surface. Our DFT calculations indicate that pseudo-halide-doped perovskites can serve as promising photovoltaic materials for optimizing the stability and optoelectronic properties of photoactive layers.

KeywordFirst-principles Optoelectronic Properties Pseudo-halide Anions Sno2/perovskite Interfaces Stability
DOI10.1016/j.surfin.2023.103530
URLView the original
Indexed BySCIE
Language英語English
WOS Research AreaChemistry ; Materials Science ; Physics
WOS SubjectChemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter
WOS IDWOS:001101619300001
PublisherELSEVIER, RADARWEG 29, 1043 NX AMSTERDAM, NETHERLANDS
Scopus ID2-s2.0-85174812043
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Citation statistics
Document TypeJournal article
CollectionINSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Corresponding AuthorZhang, Linghai; Wang, Lin
Affiliation1.School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech
2.Institute of Applied Physics and Materials Engineering (IAPME), Zhuhai UM Science & Technology Research Institute (ZUMRI), University of Macau, Taipa, Macau SAR, 999078, China
3.Jiangmen Laboratory of Carbon Science and Technology, Hong Kong University of Science and Technology (Guangzhou), Jiangmen, Guangdong, 529199, China
Recommended Citation
GB/T 7714
Chen, Jinlian,Feng, Mengjia,Zha, Chenyang,et al. Pseudo-halide anions engineering of FAPbI3 surface and SnO2/FAPbI3 heterostructure[J]. Surfaces and Interfaces, 2023, 43, 103530.
APA Chen, Jinlian., Feng, Mengjia., Zha, Chenyang., Zhang, Linghai., & Wang, Lin (2023). Pseudo-halide anions engineering of FAPbI3 surface and SnO2/FAPbI3 heterostructure. Surfaces and Interfaces, 43, 103530.
MLA Chen, Jinlian,et al."Pseudo-halide anions engineering of FAPbI3 surface and SnO2/FAPbI3 heterostructure".Surfaces and Interfaces 43(2023):103530.
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