Exciton Recombination Properties in CdSe/CdZnSe Quantum Wells

UM > INSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING

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	Exciton Recombination Properties in CdSe/CdZnSe Quantum Wells
	X Zhang; Z Xu; Y Hou; Z Wang; Y Wang; X Xu; TANG ZIKANG; H Wang; W Li; F Zhao
	1999-08
Source Publication	CHINESE JOURNAL OF SEMICONDUCTORS-CHINESE EDITION-
Document Type	Journal article
Collection	INSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Recommended Citation GB/T 7714	X Zhang,Z Xu,Y Hou,et al. Exciton Recombination Properties in CdSe/CdZnSe Quantum Wells[J]. CHINESE JOURNAL OF SEMICONDUCTORS-CHINESE EDITION-, 1999.
APA	X Zhang., Z Xu., Y Hou., Z Wang., Y Wang., X Xu., TANG ZIKANG., H Wang., W Li., & F Zhao (1999). Exciton Recombination Properties in CdSe/CdZnSe Quantum Wells. CHINESE JOURNAL OF SEMICONDUCTORS-CHINESE EDITION-.
MLA	X Zhang,et al."Exciton Recombination Properties in CdSe/CdZnSe Quantum Wells".CHINESE JOURNAL OF SEMICONDUCTORS-CHINESE EDITION- (1999).

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