| Residential College | false |
| Status | 已發表Published |
| Growth and visible photoluminescence of highly oriented (1 0 0) zinc oxide film synthesized on silicon by plasma immersion ion implantation | |
Mei, YF; Fu, RKY; Siu, GG; Chu, PK; Li, ZM; Yang, CL; Ge, WK; TANG ZIKANG ; Cheung, WY; Wong, SP
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| 2005-08 | |
| Source Publication | Materials science in semiconductor processing
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| Document Type | Journal article |
| Collection | INSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING |
| Recommended Citation GB/T 7714 | Mei, YF,Fu, RKY,Siu, GG,et al. Growth and visible photoluminescence of highly oriented (1 0 0) zinc oxide film synthesized on silicon by plasma immersion ion implantation[J]. Materials science in semiconductor processing, 2005. |
| APA | Mei, YF., Fu, RKY., Siu, GG., Chu, PK., Li, ZM., Yang, CL., Ge, WK., TANG ZIKANG., Cheung, WY., & Wong, SP (2005). Growth and visible photoluminescence of highly oriented (1 0 0) zinc oxide film synthesized on silicon by plasma immersion ion implantation. Materials science in semiconductor processing. |
| MLA | Mei, YF,et al."Growth and visible photoluminescence of highly oriented (1 0 0) zinc oxide film synthesized on silicon by plasma immersion ion implantation".Materials science in semiconductor processing (2005). |
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