UM  > INSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Residential Collegefalse
Status已發表Published
Silicon and Elemental Semiconductor Devices-Radio-Frequency Transmission Properties of Carbon Nanotubes in a Field-Effect Transistor Configuration
M Zhang; X Huo; PCH Chan; Q Liang; TANG ZIKANG
2006-03
Source PublicationIEEE Electron Device Letters
Document TypeJournal article
CollectionINSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Recommended Citation
GB/T 7714
M Zhang,X Huo,PCH Chan,et al. Silicon and Elemental Semiconductor Devices-Radio-Frequency Transmission Properties of Carbon Nanotubes in a Field-Effect Transistor Configuration[J]. IEEE Electron Device Letters, 2006.
APA M Zhang., X Huo., PCH Chan., Q Liang., & TANG ZIKANG (2006). Silicon and Elemental Semiconductor Devices-Radio-Frequency Transmission Properties of Carbon Nanotubes in a Field-Effect Transistor Configuration. IEEE Electron Device Letters.
MLA M Zhang,et al."Silicon and Elemental Semiconductor Devices-Radio-Frequency Transmission Properties of Carbon Nanotubes in a Field-Effect Transistor Configuration".IEEE Electron Device Letters (2006).
Files in This Item:
There are no files associated with this item.
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[M Zhang]'s Articles
[X Huo]'s Articles
[PCH Chan]'s Articles
Baidu academic
Similar articles in Baidu academic
[M Zhang]'s Articles
[X Huo]'s Articles
[PCH Chan]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[M Zhang]'s Articles
[X Huo]'s Articles
[PCH Chan]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.