Residential College | false |
Status | 已發表Published |
Silicon and Elemental Semiconductor Devices-Radio-Frequency Transmission Properties of Carbon Nanotubes in a Field-Effect Transistor Configuration | |
M Zhang; X Huo; PCH Chan; Q Liang; TANG ZIKANG | |
2006-03 | |
Source Publication | IEEE Electron Device Letters |
Document Type | Journal article |
Collection | INSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING |
Recommended Citation GB/T 7714 | M Zhang,X Huo,PCH Chan,et al. Silicon and Elemental Semiconductor Devices-Radio-Frequency Transmission Properties of Carbon Nanotubes in a Field-Effect Transistor Configuration[J]. IEEE Electron Device Letters, 2006. |
APA | M Zhang., X Huo., PCH Chan., Q Liang., & TANG ZIKANG (2006). Silicon and Elemental Semiconductor Devices-Radio-Frequency Transmission Properties of Carbon Nanotubes in a Field-Effect Transistor Configuration. IEEE Electron Device Letters. |
MLA | M Zhang,et al."Silicon and Elemental Semiconductor Devices-Radio-Frequency Transmission Properties of Carbon Nanotubes in a Field-Effect Transistor Configuration".IEEE Electron Device Letters (2006). |
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