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High-Performance SAW-Less TDD/FDD RF Front-Ends
Qi,Gengzhen1,2; Mak,Pui In2; Martins,Rui P.2,3
2023-01-06
Source PublicationAnalog Circuits and Signal Processing
Author of SourceRui Paulo da Silva Martins
Publication PlaceSwitzerland
PublisherSpringer
Pages3-49
Abstract

In order to develop multiband cellular radios at low cost, the rekindled on-chip N-path switched-capacitor filter is a promising replacement of the off-chip SAW (surface acoustic wave) filters, due to its property of high-Q filtering over a wide RF (radiofrequency) range. This chapter discusses the design of two SAW-less RF front-ends for TDD (time-division duplexing) and FDD (frequency division duplexing). The first is an area-efficient SAW-less wireless transceiver for multiband TDD that utilizes an N-path switched-capacitor gain loop. Fabricated in 65-nm CMOS, the transmitter mode reaches a −1-dBm output power with a −40-dBc ACLR at 1.88 GHz and a −154.5-dBc/Hz OB noise at 80-MHz offset; the receiver mode reaches 3.2-dB NF and +8-dBm OB-IIP. The second is a fully integrated multiband FDD SAW-less transmitter for 5G-NR in 28-nm CMOS. It features a bandwidth-extended N-path filter modulator to enable both wide bandwidth and high-Q bandpass filtering, also including an isolated baseband (BB) input network and a transimpedance amplifier-based power amplifier driver. The transmitter manifests a 20-MHz passband bandwidth and a low OB noise (≤ −157.5 dBc/Hz) between 1.4 and 2.7 GHz. Under 3-dBm output power, it exhibits high efficiency (2.8–3.6%) and linearity (ACLR <44 dBc and EVM <2%). This chapter presents both designs in detail.

KeywordCmos Front-ends N-path Filter Radio Frequency (Rf) Receiver (Rx) Surface Acoustic Wave (Saw) Filter Switched-capacitor (Sc) Transceiver (Trx) Transmitter (Tx)
DOI10.1007/978-3-031-22231-3_1
URLView the original
Language英語English
ISBN978-3-031-22230-6
Scopus ID2-s2.0-85146593583
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Document TypeBook chapter
CollectionINSTITUTE OF MICROELECTRONICS
Faculty of Science and Technology
DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING
Corresponding AuthorQi,Gengzhen
Affiliation1.School of Microelectronics Science and Technology,Sun Yat-sen University,Guangdong,China
2.State-Key Laboratory of Analog and Mixed-Signal VLSI/IME and FST-ECE,University of Macau,SAR,Macao
3.On leave from Instituto Superior Técnico,Universidade de Lisboa,Lisbon,Portugal
First Author AffilicationFaculty of Science and Technology
Recommended Citation
GB/T 7714
Qi,Gengzhen,Mak,Pui In,Martins,Rui P.. High-Performance SAW-Less TDD/FDD RF Front-Ends[M]. Analog Circuits and Signal Processing, Switzerland:Springer, 2023, 3-49.
APA Qi,Gengzhen., Mak,Pui In., & Martins,Rui P. (2023). High-Performance SAW-Less TDD/FDD RF Front-Ends. Analog Circuits and Signal Processing, 3-49.
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