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A 0.4-V 0.0294-mm2 Resistor-Based Temperature Sensor Achieving ±0.24 °C p2p Inaccuracy From40 °C to 125 °C and 385 fJ · K2 Resolution FoM in 65-nm CMOS
Dan Shi1; Ka-Meng Lei1; Rui P. Martins1; Pui-In Mak1
2023-09
Source PublicationIEEE JOURNAL OF SOLID-STATE CIRCUITS
ISSN0018-9200
Volume58Issue:9Pages:2543-2553
Abstract

This article describes an ultralow-voltage (ULV) resistor-based temperature sensor for sub-0.5 V energyharvesting Internet-of-Things (IoT) devices. The key features are: 1) a digital-intensive frequency-locked loop (DFLL) with a swingboosted RC front-end to enable ULV operation with high accuracy and avert the analog-to-digital converter; 2) a sample-and-boost dynamic comparator featuring background offset calibration and voltage regulation to safeguard the operation and accuracy at a sub-0.5 V supply; and 3) a resistor-regulated digital-controlled ring oscillator (DCRO) to extend the operational temperature range. Prototyped in 65-nm CMOS, the temperature sensor occupies 0.0294 mm2 and consumes 10.4 µW under 0.4 V at room temperature. The resolution figure-of-merit (FoM) is 385 fJ · K2 , and the inaccuracy measures ±0.24 ◦C (p2p) over −40 ◦C to 125 ◦C, which outperforms the state-of-the-art sub-0.5 V temperature sensors.

KeywordDigital-intensive Frequency-locked-loop (Dfll) Internet-of-things (Iot) Low Power Resistor-based Temperature Sensor Ultralow-voltage (Ulv)
DOI10.1109/JSSC.2023.3269077
URLView the original
Indexed BySCIE
Language英語English
WOS Research AreaEngineering
WOS SubjectEngineering, Electrical & Electronic
WOS IDWOS:000988389700001
Scopus ID2-s2.0-85159843698
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Citation statistics
Document TypeJournal article
CollectionINSTITUTE OF MICROELECTRONICS
Faculty of Science and Technology
DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING
Corresponding AuthorKa-Meng Lei
Affiliation1.State Key Laboratory of Analog and Mixed-Signal VLSI/Institute of Microelectronics, University of Macau, Macao, China
2.Department of ECE/Faculty of Science and Technology, University of Macau, Macao, China
First Author AffilicationUniversity of Macau
Corresponding Author AffilicationUniversity of Macau
Recommended Citation
GB/T 7714
Dan Shi,Ka-Meng Lei,Rui P. Martins,et al. A 0.4-V 0.0294-mm2 Resistor-Based Temperature Sensor Achieving ±0.24 °C p2p Inaccuracy From40 °C to 125 °C and 385 fJ · K2 Resolution FoM in 65-nm CMOS[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2023, 58(9), 2543-2553.
APA Dan Shi., Ka-Meng Lei., Rui P. Martins., & Pui-In Mak (2023). A 0.4-V 0.0294-mm2 Resistor-Based Temperature Sensor Achieving ±0.24 °C p2p Inaccuracy From40 °C to 125 °C and 385 fJ · K2 Resolution FoM in 65-nm CMOS. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 58(9), 2543-2553.
MLA Dan Shi,et al."A 0.4-V 0.0294-mm2 Resistor-Based Temperature Sensor Achieving ±0.24 °C p2p Inaccuracy From40 °C to 125 °C and 385 fJ · K2 Resolution FoM in 65-nm CMOS".IEEE JOURNAL OF SOLID-STATE CIRCUITS 58.9(2023):2543-2553.
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