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A 3.07 mW 30 MHz-BW 73.2 dB-SNDR Time-Interleaved Noise-Shaping SAR ADC With Self-Coupling Second-Order Error-Feedforward
Zhao,Shulin1; Guo,Mingqiang1; Qi,Liang2; Xu,Dengke3; Wang,Guoxing2; Martins,Rui P.1,4; Sin,Sai Weng1
2023
Source PublicationIEEE Journal of Solid-State Circuits
ISSN0018-9200
Volume58Issue:10Pages:2722-2732
Abstract

A noise-shaping successive approximation register (NS-SAR) ADC combines the merits of the $\Delta $ - $\Sigma $ and SAR ADC, transforming it into an emerging ADC architecture to reach high resolution with good power efficiency. The single-channel NS-SAR with high resolution, however, suffers from bandwidth (BW) limitations. The time-interleaved (TI) NS-SAR mitigates the speed bottleneck but faces challenges in obtaining high resolution and BW simultaneously due to the lack of a sharp noise transfer function (NTF). This article presents a calibration-free two-channel TI-NS-SAR with an aggressive second-order NTF for high resolution. Based on a one-time error feedback (FB) at midway, we propose a second-order error-feedforward (FF) to enhance the noise-shaping (NS) effect further meanwhile avoiding the excessive NTF peaking and dynamic range (DR) loss. A dynamic residue amplifier shared between two channels lowers the offset, which reduces the redundant bit to only one bit, thus improving the efficiency of SAR conversion. Fabricated in a 28 nm CMOS with 1 V supply, the prototype achieves 73.2 dB-signal-to-noise-and-distortion-ratio (SNDR) over 30 MHz-BW when operating at 330 MHz. It consumes 3.07 mW and exhibits a Schreier FoM (FoMs) of 173.1 dB.

KeywordError-feedforward (Ff) Midway Error-feedback (Fb) Noise Transfer Function (Ntf) Peaking Offset Reduction Redundancy Time-interleaving Noise-shaping Successive Approximation Register (Ns-sar)
DOI10.1109/JSSC.2023.3275636
URLView the original
Indexed BySCIE
Language英語English
WOS Research AreaEngineering
WOS SubjectEngineering, Electrical & Electronic
WOS IDWOS:001006806700001
PublisherInstitute of Electrical and Electronics Engineers Inc.
Scopus ID2-s2.0-85161036703
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Citation statistics
Document TypeJournal article
CollectionFaculty of Science and Technology
INSTITUTE OF MICROELECTRONICS
DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING
Corresponding AuthorGuo,Mingqiang; Sin,Sai Weng
Affiliation1.Institute of Microelectronics, The Faculty of Science and Technology-ECE, University of Macau, State Key Laboratory of Analog and Mixed-Signal Vlsi, Macao
2.Shanghai Jiao Tong University, Department of Micro/Nano Electronics, Shanghai, 200240, China
3.Amicro Semiconductor Company Ltd., Zhuhai, 519075, China
4.Instituto Superior Técnico, Universidade de Lisboa, Lisbon, 1049-001, Portugal
First Author AffilicationFaculty of Science and Technology
Corresponding Author AffilicationFaculty of Science and Technology
Recommended Citation
GB/T 7714
Zhao,Shulin,Guo,Mingqiang,Qi,Liang,et al. A 3.07 mW 30 MHz-BW 73.2 dB-SNDR Time-Interleaved Noise-Shaping SAR ADC With Self-Coupling Second-Order Error-Feedforward[J]. IEEE Journal of Solid-State Circuits, 2023, 58(10), 2722-2732.
APA Zhao,Shulin., Guo,Mingqiang., Qi,Liang., Xu,Dengke., Wang,Guoxing., Martins,Rui P.., & Sin,Sai Weng (2023). A 3.07 mW 30 MHz-BW 73.2 dB-SNDR Time-Interleaved Noise-Shaping SAR ADC With Self-Coupling Second-Order Error-Feedforward. IEEE Journal of Solid-State Circuits, 58(10), 2722-2732.
MLA Zhao,Shulin,et al."A 3.07 mW 30 MHz-BW 73.2 dB-SNDR Time-Interleaved Noise-Shaping SAR ADC With Self-Coupling Second-Order Error-Feedforward".IEEE Journal of Solid-State Circuits 58.10(2023):2722-2732.
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