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A CMOS Hall Sensors Array with Integrated Readout Circuit Resilient to Local Magnetic Interference from Current-Carrying Traces | |
Zou,Hengchen1; Lei,Ka Meng1; Martins,Rui P.1,2; Mak,Pui In1 | |
2023-07-15 | |
Source Publication | IEEE Sensors Journal |
ISSN | 1530-437X |
Volume | 23Issue:14Pages:16145-16153 |
Abstract | This article proposes a CMOS Hall sensors array with readout circuitry to counteract the magnetic interference from nearby conductors carrying high currents. The 3× 3 Hall sensors array with current-spinning collects the spatial magnetic field information in a time-interleaved manner while the readout circuitry, formed by a capacitively-coupled instrumentation amplifier (CCIA) with T -capacitor feedback network, amplifies the transduced signals for subsequent processing. The calibration mechanism analyzes the magnetic field distribution on the array and separates the magnetic field component due to the environment and local perturbation from adjacent traces, enabling accurate detection of the environmental magnetic field. Prototyped in a 0.35- μ m CMOS process, the Hall sensors array and readout circuit occupy an area of 2.2×2.2 mm2 and consume 3.5 mA of current under a 3.3-V supply. The hall sensors achieve an average sensitivity of 100 V/( Ȧ T ). The input-referred noise (IRN) of the entire circuit is 0.128 μ THz. With the interference cancellation scheme, the error in the magnetic field readings caused by a conductor 5 mm from the center of the chip carrying 3 A of current reduced from 120 to 5 μ T , corresponding to a 24× improvement. Overall, the average error of the captured magnetic field after calibration reaches 0.9%. |
Keyword | Array Capacitively-coupled Instrumentation Amplifier (Ccia) Hall Sensors Magnetic Field Interference Ripple Reduction Loop (Rrl) Spinning |
DOI | 10.1109/JSEN.2023.3283128 |
URL | View the original |
Indexed By | SCIE |
Language | 英語English |
WOS Research Area | Engineering ; Instruments & Instrumentation ; Physics |
WOS Subject | Engineering, Electrical & Electronic ; Instruments & Instrumentation ; Physics, Applied |
WOS ID | WOS:001030784400089 |
Scopus ID | 2-s2.0-85162622008 |
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Citation statistics | |
Document Type | Journal article |
Collection | INSTITUTE OF MICROELECTRONICS Faculty of Science and Technology DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING |
Corresponding Author | Lei,Ka Meng |
Affiliation | 1.University of Macau,State Key Laboratory of Analog and Mixed-Signal VLSI,Institute of Microelectronics,Department of ECE,Faculty of Science and Technology,Macao 2.Instituto Superior Técnico,Universidade de Lisboa,Lisbon,1649-004,Portugal |
First Author Affilication | Faculty of Science and Technology |
Corresponding Author Affilication | Faculty of Science and Technology |
Recommended Citation GB/T 7714 | Zou,Hengchen,Lei,Ka Meng,Martins,Rui P.,et al. A CMOS Hall Sensors Array with Integrated Readout Circuit Resilient to Local Magnetic Interference from Current-Carrying Traces[J]. IEEE Sensors Journal, 2023, 23(14), 16145-16153. |
APA | Zou,Hengchen., Lei,Ka Meng., Martins,Rui P.., & Mak,Pui In (2023). A CMOS Hall Sensors Array with Integrated Readout Circuit Resilient to Local Magnetic Interference from Current-Carrying Traces. IEEE Sensors Journal, 23(14), 16145-16153. |
MLA | Zou,Hengchen,et al."A CMOS Hall Sensors Array with Integrated Readout Circuit Resilient to Local Magnetic Interference from Current-Carrying Traces".IEEE Sensors Journal 23.14(2023):16145-16153. |
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