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A CMOS Hall Sensors Array with Integrated Readout Circuit Resilient to Local Magnetic Interference from Current-Carrying Traces
Zou,Hengchen1; Lei,Ka Meng1; Martins,Rui P.1,2; Mak,Pui In1
2023-07-15
Source PublicationIEEE Sensors Journal
ISSN1530-437X
Volume23Issue:14Pages:16145-16153
Abstract

This article proposes a CMOS Hall sensors array with readout circuitry to counteract the magnetic interference from nearby conductors carrying high currents. The 3× 3 Hall sensors array with current-spinning collects the spatial magnetic field information in a time-interleaved manner while the readout circuitry, formed by a capacitively-coupled instrumentation amplifier (CCIA) with T -capacitor feedback network, amplifies the transduced signals for subsequent processing. The calibration mechanism analyzes the magnetic field distribution on the array and separates the magnetic field component due to the environment and local perturbation from adjacent traces, enabling accurate detection of the environmental magnetic field. Prototyped in a 0.35- μ m CMOS process, the Hall sensors array and readout circuit occupy an area of 2.2×2.2 mm2 and consume 3.5 mA of current under a 3.3-V supply. The hall sensors achieve an average sensitivity of 100 V/( Ȧ T ). The input-referred noise (IRN) of the entire circuit is 0.128 μ THz. With the interference cancellation scheme, the error in the magnetic field readings caused by a conductor 5 mm from the center of the chip carrying 3 A of current reduced from 120 to 5 μ T , corresponding to a 24× improvement. Overall, the average error of the captured magnetic field after calibration reaches 0.9%.

KeywordArray Capacitively-coupled Instrumentation Amplifier (Ccia) Hall Sensors Magnetic Field Interference Ripple Reduction Loop (Rrl) Spinning
DOI10.1109/JSEN.2023.3283128
URLView the original
Indexed BySCIE
Language英語English
WOS Research AreaEngineering ; Instruments & Instrumentation ; Physics
WOS SubjectEngineering, Electrical & Electronic ; Instruments & Instrumentation ; Physics, Applied
WOS IDWOS:001030784400089
Scopus ID2-s2.0-85162622008
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Citation statistics
Document TypeJournal article
CollectionINSTITUTE OF MICROELECTRONICS
Faculty of Science and Technology
DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING
Corresponding AuthorLei,Ka Meng
Affiliation1.University of Macau,State Key Laboratory of Analog and Mixed-Signal VLSI,Institute of Microelectronics,Department of ECE,Faculty of Science and Technology,Macao
2.Instituto Superior Técnico,Universidade de Lisboa,Lisbon,1649-004,Portugal
First Author AffilicationFaculty of Science and Technology
Corresponding Author AffilicationFaculty of Science and Technology
Recommended Citation
GB/T 7714
Zou,Hengchen,Lei,Ka Meng,Martins,Rui P.,et al. A CMOS Hall Sensors Array with Integrated Readout Circuit Resilient to Local Magnetic Interference from Current-Carrying Traces[J]. IEEE Sensors Journal, 2023, 23(14), 16145-16153.
APA Zou,Hengchen., Lei,Ka Meng., Martins,Rui P.., & Mak,Pui In (2023). A CMOS Hall Sensors Array with Integrated Readout Circuit Resilient to Local Magnetic Interference from Current-Carrying Traces. IEEE Sensors Journal, 23(14), 16145-16153.
MLA Zou,Hengchen,et al."A CMOS Hall Sensors Array with Integrated Readout Circuit Resilient to Local Magnetic Interference from Current-Carrying Traces".IEEE Sensors Journal 23.14(2023):16145-16153.
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