| Residential College | false |
| Status | 已發表Published |
| Advances in oxide semiconductors for surface enhanced Raman scattering | |
| Du, Xuejian1,2; Liu, Di2; An, Keyu2; Jiang, Shouzhen1; Wei, Zhixian4; Wang, Shuangpeng2,3; Ip, Weng Fai3; Pan, Hui2,3 | |
| 2022-12-01 | |
| Source Publication | Applied Materials Today
 |
| Volume | 29 |
| Abstract | Surface enhanced Raman scattering (SERS) has been recognized as a powerful and useful spectroscopic technology with the capability of ultra-high sensitivity for single-molecule detection. Noble metals, such as Au, have been considered as the best substrates for SERS because of their high detection limit. However, their practical application is hindered by high cost, long-term instability, inferior reproducibility, poor biocompatibility and difficult integration with modern electronic devices. Recently, oxide semiconductors have attracted tremendous attention for their applications into SERS as they can perfectly solve the pre-mentioned challenging issues. Furthermore, the oxide semiconductor SERS substrates can realize selective detection and recyclable usage, leading to their powerful integration with the electronic devices. In the review, we shall summarize the recent advances of oxide semiconductor-based SERS substrates, and highlight the effective strategies, including defect engineering, hybridization, structure manipulation, and configuration design, to boost their SERS performance for commercial applications. At the end, current challenges and future perspectives are concisely discussed, aiming at elevating the SERS activity and broadening their practical applications. |
| Keyword | Charge transfer Enhancement mechanism Improvement strategies Oxide semiconductors SERS |
| DOI | 10.1016/j.apmt.2022.101563 |
| URL | View the original |
| Language | 英語English |
| Scopus ID | 2-s2.0-85136253867 |
| Fulltext Access | |
| Citation statistics | |
| Document Type | Journal article |
| Collection | University of Macau |
| Affiliation | 1.School of Physics and Electronics,Shandong Normal University,Jinan,250358,China 2.Institute of Applied Physics and Materials Engineering,University of Macau,999078,Macao 3.Department of Physics and Chemistry,Faculty of Science and Technology,University of Macau,999078,Macao 4.Institute of Frontier and Interdisciplinary Science and Key Laboratory of Particle Physics and Particle Irradiation (MOE),Shandong University,Qingdao,266237,China |
| First Author Affilication | INSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING |
| Recommended Citation GB/T 7714 | Du, Xuejian,Liu, Di,An, Keyu,et al. Advances in oxide semiconductors for surface enhanced Raman scattering[J]. Applied Materials Today, 2022, 29. |
| APA | Du, Xuejian., Liu, Di., An, Keyu., Jiang, Shouzhen., Wei, Zhixian., Wang, Shuangpeng., Ip, Weng Fai., & Pan, Hui (2022). Advances in oxide semiconductors for surface enhanced Raman scattering. Applied Materials Today, 29. |
| MLA | Du, Xuejian,et al."Advances in oxide semiconductors for surface enhanced Raman scattering".Applied Materials Today 29(2022). |
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