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Changes in the photoluminescence of ultra-weak interlayer coupled MoSe2/PbI2 van der Waals heterostructures
Wu, Di1,2; Li, Junzi2; Hao, Qiaoyan2; Zhou, Wenzhe3; Wang, Zhuo2; Liu, Jidong4; Tu, Yudi2; Jiang, Junjie1; Qi, Dianyu2; Li, Peng2,5; Wang, Zixuan2,6; Gan, Haibo2; Hong, Guo6,7; Liu, Fei4; He, Tingchao8; Ouyang, Fangping1,3,9; Zhang, Wenjing2
2023-06-05
Source PublicationApplied Physics Letters
ISSN0003-6951
Volume122Issue:23Pages:232103
Abstract

Photo-generated dynamics have been extensively studied in two-dimensional (2D) heterostructures, such as MoSe/WSe and MoSe/MoS. Here, we fabricate few-layer PbI and monolayer MoSe van der Waals (vdW) heterostructures. The excited-wavelength dependent measurements of photoluminescence (PL) and transient dynamic absorption spectra show that there is almost no photo-generated charge transfer between PbI and MoSe. PL changes of MoSe are rather dominated by the Fermi level (E) modulation through the interlayer charge transfer. Density functional theory calculation shows that binding energies in the heterostructures of MoSe/WSe or MoSe/MoS are 2-3 times higher than that of the MoSe/PbI heterostructure, suggesting the weaker interlayer coupling between MoSe and PbI. We propose that the weak interlayer vdW coupling cannot drive the photo-generated interlayer charge transfer while the E modulation can be achieved through the interlayer charge transfer. The findings will be helpful to fundamental research and applications for novel optoelectronic devices based on 2D material vdW heterostructures.

DOI10.1063/5.0141793
URLView the original
Indexed BySCIE
Language英語English
WOS Research AreaPhysics
WOS SubjectPhysics, Applied
WOS IDWOS:001000840800018
PublisherAIP Publishing, 1305 WALT WHITMAN RD, STE 300, MELVILLE, NY 11747-4501
Scopus ID2-s2.0-85161635444
Fulltext Access
Citation statistics
Document TypeJournal article
CollectionDEPARTMENT OF PHYSICS AND CHEMISTRY
INSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Corresponding AuthorOuyang, Fangping; Zhang, Wenjing
Affiliation1.School of Physics and Electronics, Central South University, Changsha, 410083, China
2.International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, China
3.Powder Metallurgy Research Institute, State Key Laboratory of Powder Metallurgy, Central South University, Changsha, 410083, China
4.State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275, China
5.Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, Guangdong, 518103, China
6.Institute of Applied Physics and Materials Engineering, University of Macau, Taipa, Avenida da Universidade, 999078, Macao
7.Department of Physics and Chemistry, Faculty of Science and Technology, University of Macau, Taipa, Avenida da Universidade, 999078, Macao
8.Key Laboratory of Optoelectronic Devices and Systems if Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
9.School of Physics and Technology, Xinjiang University, Urumqi, 830046, China
Recommended Citation
GB/T 7714
Wu, Di,Li, Junzi,Hao, Qiaoyan,et al. Changes in the photoluminescence of ultra-weak interlayer coupled MoSe2/PbI2 van der Waals heterostructures[J]. Applied Physics Letters, 2023, 122(23), 232103.
APA Wu, Di., Li, Junzi., Hao, Qiaoyan., Zhou, Wenzhe., Wang, Zhuo., Liu, Jidong., Tu, Yudi., Jiang, Junjie., Qi, Dianyu., Li, Peng., Wang, Zixuan., Gan, Haibo., Hong, Guo., Liu, Fei., He, Tingchao., Ouyang, Fangping., & Zhang, Wenjing (2023). Changes in the photoluminescence of ultra-weak interlayer coupled MoSe2/PbI2 van der Waals heterostructures. Applied Physics Letters, 122(23), 232103.
MLA Wu, Di,et al."Changes in the photoluminescence of ultra-weak interlayer coupled MoSe2/PbI2 van der Waals heterostructures".Applied Physics Letters 122.23(2023):232103.
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