This work presents a passive rectifier system operating at 200 MHz for implantable medical devices. In the CMOS passive rectifier, the gates of NMOS and PMOS are biased separately by using RC networks. In the rectifier, the bias resistor is divided into several pieces and implemented over individual deep N-well. In this way, the AC losses on the resistors can be reduced. To further improve the power conversion efficiency (PCE) of the rectifier, static VTH compensation is applied to PMOS switches based on active VTH compensation on NMOS switches. Since the current spikes brought by the digital circuit will have a great influence on the stability of the rectifier system, a power supply isolation scheme consisting of several RC networks is proposed. The rectifier system is implemented in a 65 nm general-purpose. Measurement results show that the proposed active-static hybrid VTH compensation scheme achieves a PCE improvement in a wide input power range with a maximum of 8% PCE improvement compared to the active VTH compensation scheme only.