In this paper, an ultra-wideband (UWB) power amplifier (PA) on a 0.25 μm gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility transistor (HEMT) process, operating in Ku-band, is presented. The broadband PA design is based on the four-stage non-uniform distributed amplifier structure. In order to improve the efficiency of the PA, a harmonic suppression network is added at the output of the drain artificial transmission line. At the same time, a capacitor is connected in series at the input of the gate, which is used to compensate for the phase offset of the gate and increase the cut-off frequency of the PA. The final gate width of the first stage is 0.56 μm, and the other three-stage gate widths are all 0.32 μm. Over the frequency range of 2–16 GHz, the simulated results of this NDPA exhibit a power-added efficiency (PAE) of 16.6–27%, a saturated continuous wave (CW) output power of 35–37 dBm, a small signal gain of 9.1–11.6 dB, and output return losses of 5–15 dB.