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Controllable growth of type-II Dirac semimetal PtTe2 atomic layer on Au substrate for sensitive room temperature terahertz photodetection
Yang, Y.1; Zhang, K.2,3; Zhang, L.2,3; Hong, G.4; Chen, C.1; Jing, H.5; Lu, J.5; Wang, P.1; Chen, X.2; Wang, L.2; Xu, H.1
2021-06-01
Source PublicationInfoMat
ISSN2567-3165
Volume3Issue:6Pages:705-715
Abstract

Platinum telluride (PtTe2), a member of metallic transition metal dichalcogenides, provides a new platform for investigating various properties such as type-II Dirac fermions, topological superconductivity, and wide-band photodetection. However, the study of PtTe2 is largely limited to exfoliated flakes, and its direct synthesis remains challenging. Herein, we report the controllable synthesis of highly crystalline 2D PtTe2 crystals with tunable morphology and thickness via chemical vapor deposition (CVD) growth on Au substrate. By adjusting Te amount and substrate temperature, anisotropic and isotropic growth modes of PtTe2 were realized on the solid and molten Au substrates, respectively. The domain size of PtTe2 crystal was achieved up to 30 μm, and its thickness can be tuned from 5.6 to 50 nm via controlling the growth time. Furthermore, a metal–PtTe2–metal structural device was fabricated to validate the wide-band terahertz (THz) photodetection from 0.04 to 0.3 THz at room temperature. Owing to the high crystallinity of PtTe2 crystal, the photodetector acquires high responsivity (30–250 mA W-1 from 0.12 to 0.3 THz), fast response rate (rise time: 7 μs, decay time: 8 μs), and high-quality imaging ability. Our work demonstrates the feasibility for realistic exploitation of high-performing photodetection system at THz band based on the CVDgrown 2D Dirac semimetal materials.

Keyword2d Materials Chemical Vapor Deposition Dirac Semimetal Platinum Telluride Terahertz Photodetection
DOI10.1002/inf2.12193
URLView the original
Indexed BySCIE
Language英語English
WOS Research AreaMaterials Science
WOS SubjectMaterials Science, Multidisciplinary
WOS IDWOS:000647877500001
PublisherMaterials Science, Multidisciplinary
The Source to ArticlePB_Publication
Scopus ID2-s2.0-85109377595
Fulltext Access
Citation statistics
Document TypeJournal article
CollectionINSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Corresponding AuthorHong, G.; Wang, L.; Xu, H.
Affiliation1.Key Laboratory of Applied Surface and Colloid Chemistry Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, China
2.State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China
3.Department of Optoelectronic Science and Engineering, Donghua University, Shanghai, China
4.Department of Physics and Chemistry, Faculty of Science and Technology, Institute of Applied Physics and Materials Engineering, University of Macau, Macao
5.School of Physics and Information Technology, Shaanxi Normal University, Xi'an, China
Corresponding Author AffilicationINSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Recommended Citation
GB/T 7714
Yang, Y.,Zhang, K.,Zhang, L.,et al. Controllable growth of type-II Dirac semimetal PtTe2 atomic layer on Au substrate for sensitive room temperature terahertz photodetection[J]. InfoMat, 2021, 3(6), 705-715.
APA Yang, Y.., Zhang, K.., Zhang, L.., Hong, G.., Chen, C.., Jing, H.., Lu, J.., Wang, P.., Chen, X.., Wang, L.., & Xu, H. (2021). Controllable growth of type-II Dirac semimetal PtTe2 atomic layer on Au substrate for sensitive room temperature terahertz photodetection. InfoMat, 3(6), 705-715.
MLA Yang, Y.,et al."Controllable growth of type-II Dirac semimetal PtTe2 atomic layer on Au substrate for sensitive room temperature terahertz photodetection".InfoMat 3.6(2021):705-715.
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