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Millimeter-wave bandpass filters by standard 0.18-µm CMOS technology
Sun, S.; Shi, J.; Zhu, L.
2007-03-01
Source PublicationIEEE Electron Device Letters
ISSN0741-3106
Volume28Issue:3Pages:220-222
Abstract

Millimeter-wave (mm-wave) bandpass filters are presented using the standard 0.18-μm CMOS process. Without any postprocessing steps, thin film microstrip (TFMS) structure is properly constructed on the low-resistivity silicon substrate, aiming at reducing the substrate loss and crosstalk to a large extent. Using the broadside-coupled scheme, a tight coupling is achieved so as to make up a class of low-loss and broadband TFMS bandpass filters in the mm-wave range. To achieve a small size, one-stage and two-stage filters with sinuous-shaped resonators are designed and fabricated. A good agreement between the predicted and measured results has been observed up to 110 GHz.

KeywordBandpass Filter Millimeter-wave Silicon Substrate Thin Film Microstrip (Tfms) Line
DOI10.1109/LED.2007.891305
Indexed BySCIE
Language英語English
WOS Research AreaEngineering
WOS SubjectEngineering, Electrical & Electronic
WOS IDWOS:000245184700011
The Source to ArticlePB_Publication
Scopus ID2-s2.0-85008020372
Fulltext Access
Citation statistics
Document TypeJournal article
CollectionUniversity of Macau
Recommended Citation
GB/T 7714
Sun, S.,Shi, J.,Zhu, L.. Millimeter-wave bandpass filters by standard 0.18-µm CMOS technology[J]. IEEE Electron Device Letters, 2007, 28(3), 220-222.
APA Sun, S.., Shi, J.., & Zhu, L. (2007). Millimeter-wave bandpass filters by standard 0.18-µm CMOS technology. IEEE Electron Device Letters, 28(3), 220-222.
MLA Sun, S.,et al."Millimeter-wave bandpass filters by standard 0.18-µm CMOS technology".IEEE Electron Device Letters 28.3(2007):220-222.
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