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Tuning colour centres at a twisted hexagonal boron nitride interface
Su, Cong1,2,3; Zhang, Fang1,2,4,5; Kahn, Salman1,2; Shevitski, Brian1,2,3,6; Jiang, Jingwei1,2; Dai, Chunhui1,2,3; Ungar, Alex1,2,3; Park, Ji Hoon7; Watanabe, Kenji8; Taniguchi, Takashi9; Kong, Jing7; Tang, Zikang5; Zhang, Wenqing4; Wang, Feng1,2,3; Crommie, Michael1,2,3; Louie, Steven G.1,2; Aloni, Shaul6; Zettl, Alex1,2,3
2022-07-14
Source PublicationNature Materials
ISSN1476-1122
Volume21Issue:8Pages:896-902
Abstract

The colour centre platform holds promise for quantum technologies, and hexagonal boron nitride has attracted attention due to the high brightness and stability, optically addressable spin states and wide wavelength coverage discovered in its emitters. However, its application is hindered by the typically random defect distribution and complex mesoscopic environment. Here, employing cathodoluminescence, we demonstrate on-demand activation and control of colour centre emission at the twisted interface of two hexagonal boron nitride flakes. Further, we show that colour centre emission brightness can be enhanced by two orders of magnitude by tuning the twist angle. Additionally, by applying an external voltage, nearly 100% brightness modulation is achieved. Our ab initio GW and GW plus Bethe–Salpeter equation calculations suggest that the emission is correlated to nitrogen vacancies and that a twist-induced moiré potential facilitates electron–hole recombination. This mechanism is further exploited to draw nanoscale colour centre patterns using electron beams.

DOI10.1038/s41563-022-01303-4
URLView the original
Indexed BySCIE
Language英語English
WOS Research AreaChemistry ; Materials Science ; Physics
WOS SubjectChemistry, Physical ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS IDWOS:000825183300002
Scopus ID2-s2.0-85134323989
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Citation statistics
Document TypeJournal article
CollectionINSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Corresponding AuthorLouie, Steven G.; Aloni, Shaul; Zettl, Alex
Affiliation1.Department of Physics, University of California, Berkeley, United States
2.Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, United States
3.Kavli Energy NanoSciences Institute at the University of California, Berkeley, United States
4.Department of Physics, Southern University of Science and Technology, Shenzhen, China
5.Institute of Applied Physics and Materials Engineering, University of Macau, Macao
6.The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, United States
7.Electrical Engineering and Computer Sciences, Massachusetts Institute of Technology, Cambridge, United States
8.Research Centre for Functional Materials, National Institute for Materials Science, Tsukuba, Japan
9.International Centre for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
Recommended Citation
GB/T 7714
Su, Cong,Zhang, Fang,Kahn, Salman,et al. Tuning colour centres at a twisted hexagonal boron nitride interface[J]. Nature Materials, 2022, 21(8), 896-902.
APA Su, Cong., Zhang, Fang., Kahn, Salman., Shevitski, Brian., Jiang, Jingwei., Dai, Chunhui., Ungar, Alex., Park, Ji Hoon., Watanabe, Kenji., Taniguchi, Takashi., Kong, Jing., Tang, Zikang., Zhang, Wenqing., Wang, Feng., Crommie, Michael., Louie, Steven G.., Aloni, Shaul., & Zettl, Alex (2022). Tuning colour centres at a twisted hexagonal boron nitride interface. Nature Materials, 21(8), 896-902.
MLA Su, Cong,et al."Tuning colour centres at a twisted hexagonal boron nitride interface".Nature Materials 21.8(2022):896-902.
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