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High Voltage Generation with Stacked Photodiodes in Standard CMOS Process
Law, M. K.; Bermak, A.
2010-12-01
Source PublicationIEEE Electron Device Letters
ISSN0741-3106
Pages1425-1427
Abstract

In this letter, a method to generate a high open-circuit voltage using integrated photodiodes fabricated in a standard CMOS process is described. In contrast to conventional high-voltage generation schemes that serially connect photodiodes using different substrates or high-cost silicon-on-insulator processes, the proposed scheme preserves a single substrate solution using a low-cost standard CMOS process. The proposed scheme exploits the photocurrent generation capabilities of different photodiode implementations available in a standard CMOS process and provides compensation for parasitic losses to generate a high output voltage using series connections of photodiodes. Output voltages of 0.84 and 1.3 V are successfully generated by two-stage and three-stage photodiode connections using an AMS 0.35-μm standard CMOS process, respectively. Our proposed scheme is therefore suitable for low-cost high-integration-level system-on-chip implementations utilizing integrated solar energy harvesting with high-voltage generation.

KeywordEnergy Harvesting High Open-circuit Voltage Stacked Integrated Photodiodes.
DOI10.1109/LED.2010.2075910
URLView the original
Language英語English
WOS IDWOS:000284541400023
The Source to ArticlePB_Publication
Scopus ID2-s2.0-78649446422
Fulltext Access
Citation statistics
Document TypeJournal article
CollectionINSTITUTE OF MICROELECTRONICS
Corresponding AuthorLaw, M. K.
Recommended Citation
GB/T 7714
Law, M. K.,Bermak, A.. High Voltage Generation with Stacked Photodiodes in Standard CMOS Process[J]. IEEE Electron Device Letters, 2010, 1425-1427.
APA Law, M. K.., & Bermak, A. (2010). High Voltage Generation with Stacked Photodiodes in Standard CMOS Process. IEEE Electron Device Letters, 1425-1427.
MLA Law, M. K.,et al."High Voltage Generation with Stacked Photodiodes in Standard CMOS Process".IEEE Electron Device Letters (2010):1425-1427.
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