Residential College | false |
Status | 已發表Published |
Electronic self-passivation of single vacancy in black phosphorus via ionization | |
Fang, Hanyan1; Gallardo, Aurelio2,3; Dulal, Dikshant4; Qiu, Zhizhan1; Su, Jie1; Telychko, Mykola1; Mahalingam, Harshitra4; Lyu, Pin1; Han, Yixuan1; Zheng, Yi5; Cai, Yongqing6; Rodin, Aleksandr4,7; Jelínek, Pavel2,8; Lu, Jiong1,7 | |
2022-04-26 | |
Source Publication | Physical Review Letters |
ISSN | 0031-9007 |
Volume | 128Issue:17Pages:176801 |
Abstract | We report that monoelemental black phosphorus presents a new electronic self-passivation scheme of single vacancy (SV). By means of low-temperature scanning tunneling microscopy and noncontact atomic force microscopy, we demonstrate that the local reconstruction and ionization of SV into negatively charged SV- leads to the passivation of dangling bonds and, thus, the quenching of in-gap states, which can be achieved by mild thermal annealing or STM tip manipulation. SV exhibits a strong and symmetric Friedel oscillation (FO) pattern, while SV- shows an asymmetric FO pattern with local perturbation amplitude reduced by one order of magnitude and a faster decay rate. The enhanced passivation by forming SV- can be attributed to its weak dipolelike perturbation, consistent with density-functional theory numerical calculations. Therefore, self-passivated SV- is electrically benign and acts as a much weaker scattering center, which may hold the key to further enhance the charge mobility of black phosphorus and its analogs. |
DOI | 10.1103/PhysRevLett.128.176801 |
URL | View the original |
Indexed By | SCIE |
Language | 英語English |
WOS Research Area | Physics |
WOS Subject | Physics, Multidisciplinary |
WOS ID | WOS:000804572300005 |
Publisher | American Physical Society |
Scopus ID | 2-s2.0-85129699951 |
Fulltext Access | |
Citation statistics | |
Document Type | Journal article |
Collection | INSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING |
Corresponding Author | Cai, Yongqing |
Affiliation | 1.Department of Chemistry, National University of Singapore, Singapore, 117543, Singapore 2.Institute of Physics, Academy of Sciences of the Czech Republic, Prague, 162 00, Czech Republic 3.Department of Condensed Matter Physics, Faculty of Mathematics and Physics, Charles University, Prague, V Holešovickách 2, 180 00, Czech Republic 4.Yale-NUS College, Singapore, 16 College Avenue West, 138527, Singapore 5.Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou, 312007, China 6.Joint Key Laboratory of Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Taipa, 999078, Macao 7.Centre for Advanced 2D Materials (CA2DM), National University of Singapore, Singapore, 117543, Singapore 8.Regional Centre of Advanced Technologies and Materials, Czech Advanced Technology and Research Institute (CATRIN), Palacký University Olomouc, Olomouc, 78371, Czech Republic |
Corresponding Author Affilication | INSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING |
Recommended Citation GB/T 7714 | Fang, Hanyan,Gallardo, Aurelio,Dulal, Dikshant,et al. Electronic self-passivation of single vacancy in black phosphorus via ionization[J]. Physical Review Letters, 2022, 128(17), 176801. |
APA | Fang, Hanyan., Gallardo, Aurelio., Dulal, Dikshant., Qiu, Zhizhan., Su, Jie., Telychko, Mykola., Mahalingam, Harshitra., Lyu, Pin., Han, Yixuan., Zheng, Yi., Cai, Yongqing., Rodin, Aleksandr., Jelínek, Pavel., & Lu, Jiong (2022). Electronic self-passivation of single vacancy in black phosphorus via ionization. Physical Review Letters, 128(17), 176801. |
MLA | Fang, Hanyan,et al."Electronic self-passivation of single vacancy in black phosphorus via ionization".Physical Review Letters 128.17(2022):176801. |
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